參數(shù)資料
型號: IRF6725MPBF
廠商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁數(shù): 5/9頁
文件大小: 258K
代理商: IRF6725MPBF
www.irf.com
5
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
Fig 12.
Maximum Drain Current vs. Case Temperature
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig11.
Maximum Safe Operating Area
Fig 14.
Maximum Avalanche Energy vs. Drain Current
0.2
0.3 0.4
0.5
0.6 0.7 0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
IS
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
ID
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
T
ID = 100μA
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
TJ = 150°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
EA
ID
2.1A
2.8A
TOP
BOTTOM22A
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