參數(shù)資料
型號： IRF650B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 28 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/10頁
文件大小： 898K
代理商： IRF650B
2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
I
IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
28A, 200V, R
DS(on)
= 0.085
@V
GS
= 10 V
Low gate charge ( typical 95 nC)
Low Crss ( typical 75 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF650B
IRFS650B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
200
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
28
17.7
112
28 *
17.7 *
112
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
600
28
15.6
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
156
1.25
50
0.4
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF650B
0.8
0.5
62.5
IRFS650B
2.51
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
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相關代理商/技術參數(shù)
參數(shù)描述
IRF650B_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF654 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRF654A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 21A I(D) | TO-220AB
IRF654B 制造商:Fairchild Semiconductor Corporation 功能描述:
IRF654B_FP001 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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