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參數(shù)資料
| 型號(hào)： | IRF644NSTRRPBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 313K |
| 代理商： | IRF644NSTRRPBF |
IRF644N/IRF644NS/IRF644NL
Data and specifications subject to change without notice.
This product has been designed and qualified for the (IRF644N) automotive [Q101]
& (IRF644NS/L) industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10/04
D2Pak Tape & Reel Information
3
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 5.0mH,
RG = 25, IAS = 8.4A. (See Figure 12)
ISD ≤ 8.4A, di/dt ≤ 378A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400s; duty cycle ≤ 2%.
This is a typical value at device destruction
and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
This is only applied to TO-220AB package.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint & soldering techniques refer to
application note #AN-994.
TO-220AB package is not recommended for Surface Mount Application.
Document Number: 90069
www.vishay.com
11
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PDF描述 |
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| IRF644PBF | 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF644S | 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| IRF740A | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF7410 | HEXFET Power MOSFET |
| IRF7413Z | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF644PBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF644S | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF644SPBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF644STRL | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF644STRLPBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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