參數(shù)資料
型號(hào)： IRF644NPBF
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： JFETs
英文描述： 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： LEAD FREE PACKAGE-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 313K
代理商： IRF644NPBF
IRF644N/IRF644NS/IRF644NL
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.3
V
TJ = 25°C, IS = 14A, VGS = 0V
trr
Reverse Recovery Time
–––
165 250
ns
TJ = 25°C, IF = 14A
Qrr
Reverse Recovery Charge
–––
1.0
1.6
C
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
14
56
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
250
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.33 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
240
m
VGS = 10V, ID = 8.4A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
8.8
–––
S
VDS = 50V, ID = 8.4A
–––
25
A
VDS = 250V, VGS = 0V
–––
250
VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
54
ID = 8.4A
Qgs
Gate-to-Source Charge
–––
9.2
nC
VDS = 200V
Qgd
Gate-to-Drain ("Miller") Charge
–––
26
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 125V
tr
Rise Time
–––
21
–––
ID = 8.4A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 6.2
tf
Fall Time
–––
17
–––
VGS = 10V, See Fig. 10
Between lead,
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1060 –––
VGS = 0V
Coss
Output Capacitance
–––
140
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
38
–––
pF
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB mount)**
–––
40
Document Number: 90069
www.vishay.com
2
相關(guān)PDF資料
PDF描述
IRF644NSTRLPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
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IRF644PBF 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644S 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF644NS 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF644NSPBF 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF644NSTRL 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF644NSTRLPBF 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF644NSTRR 功能描述:MOSFET N-CH 250V 14A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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