參數(shù)資料
型號： IRF634N
元件分類： JFETs
英文描述： 8 A, 250 V, 0.435 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 4/11頁
文件大?。?/td> 301K
代理商： IRF634N
IRF634N/S/L
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.3
V
TJ = 25°C, IS = 4.8A, VGS = 0V
trr
Reverse Recovery Time
–––
130
200
ns
TJ = 25°C, IF = 4.8A
Qrr
Reverse Recovery Charge
–––
650
980
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
8.0
32
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
250
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.33
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.435
VGS = 10V, ID = 4.8A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
5.4
–––
S
VDS = 50V, ID = 4.8A
–––
25
A
VDS = 250V, VGS = 0V
–––
250
VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
34
ID = 4.8A
Qgs
Gate-to-Source Charge
–––
6.5
nC
VDS = 200V
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
8.4
–––
VDD = 125V
tr
Rise Time
–––
16
–––
ID = 4.8A
td(off)
Turn-Off Delay Time
–––
28
–––
RG = 1.3
tf
Fall Time
–––
15
–––
VGS = 10V, See Fig. 10
Between lead,
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
620
–––
VGS = 0V
Coss
Output Capacitance
–––
84
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
23
–––
pF
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.7
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB mount)
–––
40
相關(guān)PDF資料
PDF描述
IRF644NPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644NSTRLPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF644NSTRRPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF644PBF 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644S 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF634NL 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
IRF634NLPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF634NPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF634NS 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF634NSPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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