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參數(shù)資料
| 型號(hào)： | IRF5NJZ48 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*) |
| 中文描述： | 功率MOSFET N溝道（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.016ohm，身份證\u003d 22A條*） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | IRF5NJZ48 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
22*
22*
88
75
0.60
±20
160
22
7.5
3.6
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 s)
1.0
g
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
o
C
A
11/10/00
www.irf.com
1
55V, N-CHANNEL
SMD-0.5
Product Summary
Part Number
BVDSS
R
DS(on)
I
D
IRF5NJZ48 55V 0.016
22A*
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
* Current is limited by package
HEXFET
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJZ48
PD - 94034
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