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參數(shù)資料
| 型號： | IRF5Y3315CM |
| 廠商： | International Rectifier |
| 英文描述： | Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET N溝道（減振鋼板基本\u003d 150伏，的Rds（on）\u003d 0.085ohm，身份證\u003d 18A條*） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 106K |
| 代理商： | IRF5Y3315CM |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
18*
12
72
75
0.6
±20
94
12
7.5
3.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
o
C
A
6/22/01
www.irf.com
1
Product Summary
Part Number
IRF5Y3315CM
BVDSS
150V
R
DS(on)
0.085
18A*
I
D
For footnotes refer to the last page
TO-257AA
HEXFET
POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y3315CM
150V, N-CHANNEL
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
* Current is limited by package
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
PD - 94268
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