參數資料
型號： IRF540,
廠商： Intersil Corporation
英文描述： 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應管)
中文描述： 第28A，100V的，0.077 Ohm的N通道PowerMOSFET（第28A，100V的，0.077 Ohm的N溝道增強型功率馬鞍山場效應管）
文件頁數： 2/7頁
文件大?。?/td> 75K
代理商： IRF540,
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF540, RF1S540SM
100
100
28
20
110
±
20
120
0.8
230
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 95V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
I
D
= 17A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 17A (Figure 12)
V
DD
= 50V, I
D
≈
28A, R
G
≈
9.1
, R
L
= 1.7
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
100
-
-
V
Gate to Threshold Voltage
2
-
4
V
μ
A
μ
A
A
Zero Gate Voltage Drain Current
-
-
25
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
28
-
-
Gate to Source Leakage Current
-
-
±
100
0.077
nA
S
Drain to Source On Resistance (Note 2)
-
0.060
Forward Transconductance (Note 2)
8.7
13
-
Turn-On Delay Time
-
15
23
ns
Rise Time
-
70
110
ns
Turn-Off Delay Time
-
40
60
ns
Fall Time
-
50
83
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 28A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
-
38
59
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
8
-
nC
Gate to Drain “Miller” Charge
-
21
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
1450
-
pF
Output Capacitance
-
550
-
pF
Reverse Transfer Capacitance
-
100
-
pF
Internal Drain Inductance
Measured From the
Contact Screw on Tab To
Center of Die
ModifiedMOSFETSymbol
Showing the Internal
Devices Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
R
θ
JA
-
-
1.25
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
80
RF1S540SM Mounted on FR-4 Board with Minimum
Mounting Pad
-
-
62
L
S
L
D
G
D
S
IRF540, RF1S540SM
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