參數(shù)資料
型號： IRF530ND
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | CHIP
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 17A條（?。﹟芯片
文件頁數(shù)： 2/10頁
文件大?。?/td> 206K
代理商： IRF530ND
IRF5305S/L
2
www.irf.com
V
DD
= -25V, Starting T
J
= 25°C, L = 2.1mH
R
G
= 25
, I
AS
= -16A. (See Figure 12)
I
SD
≤
-16A, di/dt
≤
-280A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRF5305 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Parameter
Min. Typ. Max. Units
-55
–––
–––
-0.034 –––
–––
–––
-2.0
–––
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
66
–––
39
–––
63
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -16A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -25V, I
D
= -16A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -16A
V
DS
= -44V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -28V
I
D
= -16A
R
G
= 6.8
R
D
= 1.6
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
0.06
-4.0
–––
-25
-250
100
-100
63
13
29
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1200 –––
520
250
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
T
J
= 25°C, I
F
= -16A
di/dt = -100A/μs
–––
–––
–––
–––
–––
–––
–––
–––
71
170
-1.3
110
250
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
S
D
G
-31
-110
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