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參數(shù)資料
| 型號： | IRF530A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 14 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 254K |
| 代理商： | IRF530A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10
Lower R
DS(ON)
: 0.092 (Typ.)
A (Max.) @ V
DS
= 100V
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
JC
R
CS
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
100
14
9.9
56
2
0
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220
1.Gate 2. Drain 3. Source
3
2
1
μ
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
θ
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
IRF530A
BV
DSS
= 100 V
R
DS(on)
= 0.11
I
D
= 14 A
261
14
5.5
6.5
55
0.36
- 55 to +175
300
2.74
--
62.5
--
0.5
--
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF550 | Advanced Power MOSFET |
| IRF550A | Advanced Power MOSFET |
| IRF610A | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為200V，導通電阻為1.5Ω，漏電流為3.3A）) |
| IRF610B | 200V N-Channel MOSFET |
| IRFS610B | 200V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF530A | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CH/100V/14A/0.11OHM/SUBSTITUTE OF IRF5 |
| IRF530FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530H | 制造商:HAR 功能描述:IRF530 HARRIS NOTES |
| IRF530L | 功能描述:MOSFET N-CH 100V 14A TO-262 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
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