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參數(shù)資料
| 型號： | IRF3808L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d 0.007ohm，身份證\u003d 106A章） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 161K |
| 代理商： | IRF3808L |
IRF3808S
IRF3808L
HEXFET
Power MOSFET
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low R
θ
JC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
106
75
550
200
1.3
± 20
430
82
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
°
C
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°
C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, Steady State)**
Thermal Resistance
V
DSS
= 75V
R
DS(on)
= 0.007
I
D
= 106A
Description
03/08/02
www.irf.com
1
G
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
G
G
G
G
Benefits
Typical Applications
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
G
G
AUTOMOTIVE MOSFET
PD - 94338A
HEXFET(R) is a registered trademark of International Rectifier.
D
2
Pak
IRF3808S
TO-262
IRF3808L
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF3808LPBF | 功能描述:MOSFET N-CH 75V 106A TO-262 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF3808PBF | 功能描述:MOSFET MOSFT 75V 140A 7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3808S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRF3808SPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3808SPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:200W |
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