參數(shù)資料
型號: IRF4435
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
中文描述: 晶體管| MOSFET的| P通道| 30V的五(巴西)直| 8A條(?。﹟蘇
文件頁數(shù): 1/8頁
文件大?。?/td> 211K
代理商: IRF4435
Parameter
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
6/12/01
Parameter
Max.
50
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
IRF4435
HEXFET
Power MOSFET
These P-channel HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
V
DSS
= -30V
R
DS(on)
= 0.020
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
PD- 94243
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
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