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參數(shù)資料
| 型號： | IRF3205ZSTRLPBF |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 379K |
| 代理商： | IRF3205ZSTRLPBF |
IRF3205ZS/LPbF
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.051
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.9
6.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
71
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Qg
Total Gate Charge
–––
76
110
Qgs
Gate-to-Source Charge
–––
21
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
30
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––95–––
td(off)
Turn-Off Delay Time
–––
45
–––
ns
tf
Fall Time
–––67–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
3450
–––
Coss
Output Capacitance
–––
550
–––
Crss
Reverse Transfer Capacitance
–––
310
–––
pF
Coss
Output Capacitance
–––
1940
–––
Coss
Output Capacitance
–––
430
–––
Coss eff.
Effective Output Capacitance
–––
640
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
440
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
25
38
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 28V
ID = 66A
RG = 6.8
TJ = 25°C, IS = 66A, VGS = 0V e
TJ = 25°C, IF = 66A, VDD = 25V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 66A
e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 66A
ID = 66A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
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