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參數(shù)資料
| 型號(hào)： | IRF247 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 13 A, 275 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | IRF247 |
5-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
25
20
15
0
10
I
D
,
80
μ
s PULSE TEST
5
10V
5.5V
4.5V
V
GS
= 5.0V
4.0V
6.0V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0
2
4
6
8
10
80
μ
s PULSE TEST
V
DS
≥
50V
T
J
= 150
o
C
T
J
= 25
o
C
60
I
D,
DRAIN CURRENT (A)
15
30
45
0
75
2.5
2.0
1.5
0
1.0
r
D
,
V
GS
= 20V
0.5
V
GS
= 10V
80
μ
s PULSE TEST
O
)
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
2.4
1.2
0
0
60
120
160
O
I
D
= 14A
V
GS
= 10V
-20
-40
20
40
100
140
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-20
20
100
160
B
0
-40
40
80
120 140
I
D
= 250
μ
A
0
10
100
P
F
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
IRF244, IRF245, IRF246, IRF247
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