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參數(shù)資料
| 型號(hào)： | IRF247 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 13 A, 275 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 70K |
| 代理商： | IRF247 |
5-4
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
T
C,
CASE TEMPERATURE (
o
C)
50
75
100
25
150
15
12
9
0
6
I
D
D
3
IRF245, IRF247
125
IRF244, IRF246
10
1
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
t
2
P
DM
t
1
NOTES:
t
2
0.2
0.1
0.05
0.02
0.01
0.001
0.5
Z
θ
J
,
I
o
C
100
10
1
10
100
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
μ
s
100
μ
s
1ms
DC
IRF246,
IRF247
10ms
IRF244, 246
IRF245, 247
1000
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
IRF244, 246
IRF245, 247
IRF244,
IRF245
1000
1
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
25
50
75
100
0
125
25
20
15
0
10
I
D
,
V
GS
=5.5V
V
GS
=4.5V
V
GS
= 5.0V
V
GS
=4.0V
80
μ
s PULSE TEST
5
V
GS
=6.0V
V
GS
=10V
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