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參數(shù)資料
| 型號： | IRF237 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 69K |
| 代理商： | IRF237 |
5-3
IRF234, IRF235, IRF236, IRF237
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz, (Figure 11)
-
600
-
pF
Output Capacitance
C
OSS
-
180
-
pF
Reverse Transfer Capacitance
C
RSS
-
52
-
pF
Internal Drain Inductance
L
D
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
-
12.5
-
nH
Therma Resistance Junction to Case
R
θ
JC
-
-
1.67
o
C/W
Therma Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
S
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
8.1
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
32
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 8.1A, V
GS
= 0V, (Figure 13)
-
-
2.0
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 8.1A, dI
SD
/dt = 100A/
μ
s
92
180
390
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 8.1A, dI
SD
/dt = 100A/
μ
s
0.63
1.3
2.7
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.5mH, R
G
= 25
, peak I
AS
= 8.1A. See Figures 15, 16.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
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