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參數(shù)資料
| 型號： | IRF1310NSTRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 42A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | IRF1310NSTRR |
IRF130SMD05
N
IRFN130SMD05
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 10/00
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
T
J
, T
stg
R
q
JC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
11A
7A
44A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD 05
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
FEATURES
HERMETICALLY SEALED
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
V
DSS
I
D(cont)
R
DS(on)
100V
11A
0.19
W
IRF130SMD05
IRFN130SMD05
PAD1 = GATE
PAD 2 DRAIN
PAD3 = SOURCE
PAD1 = SOURCE
PAD 2 = DRAIN
PAD3 = GATE
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