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參數(shù)資料
| 型號： | IR2011 |
| 廠商： | International Rectifier |
| 英文描述： | HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高端和低端驅(qū)動 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 143K |
| 代理商： | IR2011 |
Features
Floating channel designed for bootstrap operation
Fully operational up to +200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10V to 20V
Independent low and high side channels
Input logicHIN/LIN active high
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
8-Lead SOIC is also available LEAD-FREE (PbF)
Applications
Audio Class D amplifiers
High power DC-DC SMPS converters
Other high frequency applications
Description
The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down
to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri-
etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con-
struction.
Packages
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
200V max.
I
O
+/-
1.0A /1.0A typ.
V
OUT
10 - 20V
t
on/off
80 & 60 ns typ.
Delay Matching
20 ns max.
IR2011(
S) & (PbF
)
www.irf.com
1
Typical Connection
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
Data Sheet No.PD60217 Rev A
8-Lead SOIC
IR2011S
also available
LEAD-FREE (PbF)
8-Lead PDIP
IR2011
200V
TO
LOAD
V
CC
COM
LIN
HIN
V
S
V
B
HO
HIN
COM
V
CC
LIN
LO
1
8
4
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IR2011S | HIGH AND LOW SIDE DRIVER |
| IR2011SPbF | HIGH AND LOW SIDE DRIVER |
| IR20153S | HIGH SIDE DRIVER WITH RECHARGE |
| IR20153SPbF | HIGH SIDE DRIVER WITH RECHARGE |
| IR2085S | HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR2011PBF | 功能描述:功率驅(qū)動器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2011PBF | 制造商:International Rectifier 功能描述:DRIVER, HALF BRIDGE, 200V, 8DIP 制造商:International Rectifier 功能描述:DRIVER, HALF BRIDGE, 200V, 8DIP; Device Type:MOSFET; Module Configuration:High Side, Low Side; Peak Output Current:1A; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:DIP; No. of Pins:8; Input Delay:80ns; Output ;RoHS Compliant: Yes |
| IR2011S | 功能描述:HI/LO SIDE DRVR 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IR2011SPBF | 功能描述:功率驅(qū)動器IC HI LO SIDE DRVR 200V 1.0A 80ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2011STR | 功能描述:HI/LO SIDE DRVR 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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