參數(shù)資料
型號： IR20153S
廠商： International Rectifier
英文描述： HIGH SIDE DRIVER WITH RECHARGE
中文描述： 高邊驅(qū)動器，帶有補(bǔ)給
文件頁數(shù)： 1/15頁
文件大?。?/td> 220K
代理商： IR20153S
Features
Floating channel designed for bootstrap operation
Fully operational up to 150V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11
μ
s and 0.8
μ
s
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Product Summary
V
OFFSET
150V max.
I
O
+/-
400mA @ VBS=7V,
1.5A @ VBS=16V
V
OUT
5-20V
t
on/off
1.0 and 0.3
μ
s
IR20153S & (PbF)
www.irf.com
1
Typical Connection
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
Preliminary Data Sheet PD60214 Rev B
Description
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
Package
8-Lead SOIC
VS
HOL
VB
VCC
GND
HOH
IN
RESET
VCC
IN
RESET
up to 150V
Load
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