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參數(shù)資料
| 型號： | IR02H420 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 376K |
| 代理商： | IR02H420 |
IR02H420
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 15V and T
A
= 25oC unless otherwise specified. Switching time waveform definitions are
shown in figure 2.
Parameter
Symbol
Definition
t
on
Turn-On Propagation Delay (see note 2)
t
off
Turn-Off Propagation Delay (see note 2)
t
r
Turn-On Rise Time (see note 2)
t
f
Turn-Off Fall Time (see note 2)
MT
Delay Matching, HS & LS Turn-On/Off
t
rr
Reverse Recovery Time (MOSFET Body Diode)
Q
rr
Reverse Recovery Charge (MOSFET Body Diode)
T
A
= 25oC
Min.
---
---
---
---
---
---
---
Typ.
130
90
80
40
30
260
0.7
Max. Units
200
200
120
70
---
---
---
Test Conditions
V
S
= 0 V
V
S
= 500 V
ns
I
F
= 0.7 A
di/dt = 100A/μs
μC
Note 2:
input voltage. This is shown as HO in figure 2.
Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate
Static Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 15V and T
A
= 25oC unless otherwise specified. The Input voltage and current levels are
referenced to COM.
Parameter
Symbol
Definition
Supply Characteristics
V
CCUV+
V
CC
Supply Undervoltage Positive Going
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going
Threshold
I
QCC
Quiescent V
CC
Supply Current
I
QBS
Quiescent V
BS
Supply Current
I
OS
Offset Supply Leakage Current
Input Characteristics
V
IH
Logic “1” Input Voltage
V
IL
Logic “0” Input Voltage
I
IN+
Logic “1” Input Bias Current
I
IN-
Logic “0” Input Bias Current
Output Characteristics
R
DS(on)
Static Drain-to-Source On-Resistance
V
SD
Diode Forward Voltage
T
A
= 25oC
Min.
Typ. Max. Units
Test Conditions
8.8
9.3
9.8
V
7.5
8.2
8.6
---
---
---
140
20
---
240
50
50
μA
V
B
= V
S
= 500V
2.7
---
---
---
---
---
20
---
---
0.8
40
1.0
V
V
CC
= 10V to 20V
μA
μA
---
---
3.0
0.8
---
---
V
I
D
= 700mA
T
j
= 150 oC
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