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參數(shù)資料
| 型號： | IR060LM06CS02CB |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 32K |
| 代理商： | IR060LM06CS02CB |
1
www.irf.com
Junction Size:
Square 60 x 60 mils
Wafer Size:
4"
V
RRM
Class:
600 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part:
FAST RECOVERY DIODE
IR060LM06CS02CB
Major Ratings and Characteristics
Parameters
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
100% Al, (5 μm)
Chip Dimensions
60 x 60 mils (see drawing)
Wafer Diameter
100 mm, with std. < 110 > flat
Wafer Thickness
260 μm, ± 10 μm
Maximum Width of Sawing Line
45 μm
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in essicated
nitrogen, with no contamination
(1)
Nitrogen flow on die edge.
Units
Test Conditions
V
FM
Maximum Forward Voltage
1.3 V
T
J
= 25°C, I
F
= 2 A
V
RRM
Reverse Breakdown Voltage
600 V
T
J
= 25°C, I
RRM
= 10 μA
(1)
t
rr
Typical Reverse Recovery Time
55 ns
T
J
= 25°C, I
F
= 1A, -di/dt = 100A/μs
Bulletin I0129J rev. C 02/00
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