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參數資料
| 型號： | IPP06N03LA |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | PTSE 19C 19#20 PIN PLUG |
| 中文描述： | 的OptiMOS 2功率晶體管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 347K |
| 代理商： | IPP06N03LA |
IPB06N03LA
IPI06N03LA, IPP06N03LA
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
N-channel
Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
Superior thermal resistance
175 °C operating temperature
d
v
/d
t
rated
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
1)
50
A
T
C
=100 °C
50
Pulsed drain current
I
D,pulse
T
C
=25 °C
2)
350
Avalanche energy, single pulse
E
AS
I
D
=45 A,
R
GS
=25
225
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=50 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
3)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
83
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
5.9
m
I
D
50
A
Product Summary
Type
Package
Ordering Code
Marking
IPB06N03LA
P-TO263-3-2
Q67042-S4146
06N03LA
IPI06N03LA
P-TO262-3-1
Q67042-S4147
06N03LA
IPP06N03LA
P-TO220-3-1
Q67042-S4148
06N03LA
P-TO220-3-1
P-TO262-3-1
P-TO263-3-2
Rev. 1.3
page 1
2003-12-18
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| IPP070N06L G | 功能描述:MOSFET N-CH 60V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IPP070N06N G | 功能描述:MOSFET N-CH 60V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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