參數(shù)資料
型號(hào)： IPI11N03LA
廠商： INFINEON TECHNOLOGIES AG
英文描述： OptiMOS㈢2 Power-Transistor
中文描述： 的OptiMOS㈢2功率晶體管
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 318K
代理商： IPI11N03LA
IPI11N03LA IPP11N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.9
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
25
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=20 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V,
I
D
=20 A
-
14.8
18.5
m
V
GS
=10 V,
I
D
=30 A
-
9.6
11.5
Gate resistance
R
G
-
1
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=30 A
19
39
-
S
2)
Current is limited by bondwire; with an
R
thJC
=2.9 K/W the chip is able to carry 50
A.
3)
See figure 3
4)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
5)
Device on 40 mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm
2
(one layer, 70
μm thick) copper area for drain
connection. PCB is vertical in still air.
5
Diagrams are related to straight lead
versions.
Values
Rev. 1.4
page 2
2006-05-11
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IPI11N03LAXK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 30A 3-Pin(3+Tab) TO-262
IPI11N60C3A 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPI11N60C3AAKSA1 制造商:Infineon Technologies AG 功能描述:MOSFET 制造商:Infineon Technologies AG 功能描述:MOSFET - Rail/Tube
IPI120N04S302 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPI120N04S3-02 功能描述:MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A 2 mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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