參數(shù)資料
型號(hào): IPI100N06S3L-03
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢-T Power-Transistor
中文描述: ㈢的OptiMOS - T的功率晶體管
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 165K
代理商: IPI100N06S3L-03
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
9 Typ. gate threshold voltage
10 Typ. capacitances
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(V
SD
)
I
AV
= f(
t
AV
)
parameter:
T
j
parameter: T
j(start)
25°C
100°C
150°C
1
10
100
1000
1
10
100
1000
t
AV
[μs]
I
A
25 °C
175 °C
10
3
10
2
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
[V]
I
F
Ciss
Coss
Crss
10
5
10
4
10
3
0
5
10
15
20
25
30
V
DS
[V]
C
230μA
2300μA
0
0.5
1
1.5
2
2.5
3
-60
-20
20
60
100
140
180
T
j
[°C]
V
G
Rev. 1.0
page 6
2005-09-16
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