參數(shù)資料
型號(hào): IPD350N06LG
廠(chǎng)商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ Power-Transistor
中文描述: 的OptiMOS㈢功率晶體管
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 392K
代理商: IPD350N06LG
IPD350N06L G
Opti
MOS
Power-Transistor
Features
For fast switching converters and sync. rectification
N-channel enhancement - logicl level
175 °C operating temperature
Avalanche rated
Pb-free lead plating, RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
29
A
T
C
=100 °C
20
Pulsed drain current
I
D,pulse
T
C
=25 °C
1)
116
Avalanche energy, single pulse
E
AS
I
D
=29 A,
R
GS
=25
80
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=29 A,
V
DS
=48 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
68
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
1)
See figure 3
V
DS
60
V
R
DS(on),max
35
m
I
D
29
A
Product Summary
Type
IPD350N06L G
Package
P
G
-TO252-3-11
Marking
350N06L
Rev. 1.1
page 1
2006-05-08
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