- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383111 > IPB12CNE8NG (INFINEON TECHNOLOGIES AG) OptiMOS㈢2 Power-Transistor PDF資料下載
參數(shù)資料
| 型號： | IPB12CNE8NG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 568K |
| 代理商： | IPB12CNE8NG |
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.2
K/W
R
thJA
minimal footprint
-
-
62
6 cm2 cooling area
4)
-
-
40
minimal footprint
-
-
75
6 cm2 cooling area
4)
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
85
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=83 μA
2
3
4
Zero gate voltage drain current
I
DSS
V
DS
=68 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=68 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=67 A,
(TO252)
-
9.2
12.4
m
V
GS
=10 V,
I
D
=67 A,
(TO262)
-
9.4
12.6
V
GS
=10 V,
I
D
=67 A,
(TO220, TO263)
-
9.7
12.9
Gate resistance
R
G
-
1.5
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=67 A
39
77
-
S
Values
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252)
Rev. 1.01
page 2
2006-02-17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IPD12CNE8NG | OptiMOS㈢2 Power-Transistor |
| IPI12CNE8NG | OptiMOS㈢2 Power-Transistor |
| IPB14N03LA | MULTI DVI RECEIVER - FIBER |
| IPI14N03LA | MULTI DVI DAISY CHAINABLE RECEIVER -FIBER |
| IPP14N03LA | MULTI DVI TRANSMITTER MULTIMODE -FIBER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPB12CNE8NGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 85V 67A 3-Pin(2+Tab) TO-263 |
| IPB136N08N3 G | 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPB136N08N3G | 制造商:Infineon Technologies AG 功能描述: |
| IPB136N08N3GATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 80V 45A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 80V 45A TO263-3 |
| IPB136N08N3GXT | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 80V 45A TO263-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。