參數(shù)資料
型號： INA-03184-TR1
英文描述： Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
中文描述： 低噪聲，可級聯(lián)硅雙極MMIC放大器
文件頁數(shù)： 3/4頁
文件大小： 50K
代理商： INA-03184-TR1
6-110
INA-03184 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 10 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.05
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
3.50
4.00
.32
.32
.32
.32
.32
.32
.32
.30
.31
.30
.26
.22
.09
.14
.24
.29
179
176
172
165
158
151
144
135
126
117
102
92
91
160
151
139
25.6
25.6
25.6
2.5
25.4
25.4
25.2
25.2
25.2
25.1
24.9
24.4
22.2
18.9
15.4
12.4
19.14
19.05
19.05
18.78
18.71
18.53
18.18
18.27
18.10 –102
17.92 –117
17.49 –135
16.62 –153
12.88
8.79
5.92
4.18
–3
–7
–14
–29
–43
–57
–72
–86
–37.1
–37.1
–37.1
–37.1
–36.5
–36.5
–35.9
–35.9
–35.4
–34.9
–34.4
–34.0
–33.6
–32.8
–32.0
–30.8
.014
.014
.014
.014
.015
.015
.016
.016
.017
.018
.019
.020
.021
.023
.025
.029
3
4
6
.55
.57
.55
.53
.51
.51
.50
.50
.49
.48
.45
.40
.26
.22
.26
.28
0
1.48
1.45
1.48
1.53
1.49
1.50
1.46
1.46
1.42
1.38
1.39
1.44
1.87
2.40
3.01
3.52
–3
–5
10
11
13
21
25
30
38
44
49
57
65
69
81
–11
–14
–17
–20
–23
–29
–34
–41
–50
–48
–33
–33
–43
168
134
108
87
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
S
11
S
21
S
12
S
22
INA-03184 Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
30
0
5
10
15
20
25
I
d
G
p
I
d
(mA)
0
4
6
2
10
8
V
d
(V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
N
10
15
20
25
1.0
0.1
0.2
0.5
1.0
2.0
5.0
2.0
3.0
4.0
5.0
G
p
N
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
A
= 25
°
C, I
d
= 10 mA.
T
C
= +85
°
C
T
C
= +25
°
C
T
C
= –25
°
C
10
15
20
25
30
5
10
15
25
20
Figure 3. Power Gain vs. Current.
3.0
2.0
24
25
26
27
–6
–4
–2
0
–25
+25
+85
0.1
0.2
0.5
2.0
1.0
5.0
0.1
0.2
0.5
2.0
1.0
5.0
N
–8
4
0
8
–4
1.0
4.0
3.0
5.0
2.0
P
1
P
1
G
p
TEMPERATURE (
°
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 1.5 GHz, I
d
= 10 mA.
G
p
P
1 dB
NF
Gain Flat to DC
f = 0.1–2 GHz
f = 3 GHz
I
d
= 10 to 16 mA
I
d
= 8 mA
I
d
= 8 mA
I
d
= 10 mA
I
d
= 16 mA
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