參數(shù)資料
型號: INA-03184-TR1
英文描述: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
中文描述: 低噪聲,可級聯(lián)硅雙極MMIC放大器
文件頁數(shù): 1/4頁
文件大小: 50K
代理商: INA-03184-TR1
6-108
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
Low Noise Figure:
2.6 dB Typical at 1.5 GHz
High Gain:
25 dB Typical at 1.5 GHz
3 dB Bandwidth:
DC to 2.5 GHz
Unconditionally Stable
(k>1)
Low Power Dissipation:
10 mA Bias
Low Cost Plastic Package
INA-03184
84 Plastic Package
Description
The INA-03184 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
Typical Biasing Configuration
C
block
C
bypass
1
(Optional)
C
block
R
bias
V
CC
V
= 4.0 V
(Nominal)
RFC (Optional)
RF IN
RF OUT
4
1
2
3
Note:
1. VSWR can be improved by bypassing
a 100–120
bias resistor directly to
ground. See AN-S012: Low Noise
Amplifiers.
feedback amplifier housed in a
low cost surface mount plastic
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
The INA series of MMICs is
fabricated using HP’s 10 GHz f
T
,
25GHz f
MAX
, ISOSAT-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
5965-9678E
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