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參數(shù)資料
| 型號(hào)： | INA-03100 |
| 廠(chǎng)商： | AGILENT TECHNOLOGIES INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CHIP |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | INA-03100 |
3
INA-03100 Typical Performance, T
A = 25°C
(unless otherwise noted: The values are the achievable performance for the INA-03100 mounted in a 70 mil
stripline package.)
0
5
10
15
20
25
I d
(mA)
I d
(mA)
Id (mA)
04
6
210
8
Vd (V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
NF
(dB)
10
15
20
25
30
1.0
0.1
0.2
0.5
1.0
2.0
5.0
2.0
3.0
4.0
5.0
G
p
(dB)
NF
(dB)
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 12 mA.
10
15
20
25
30
510
15
25
20
Figure 3. Power Gain vs. Current.
1.5
2.0
2.5
3.5
1.0
24
25
26
27
–2
0
2
4
–55
–25
+25
+85
+125
0.1
0.2
0.5
2.0
1.0
5.0
0.1
0.2
0.5
2.0
1.0
5.0
NF
(dB)
–8
4
0
8
–4
1.0
4.0
3.0
5.0
2.0
P
1
dB
(dBm)
P
1
dB
(dBm)
G
p
(dB)
TEMPERATURE (
°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.5 GHz, Id = 12 mA.
Gp
P1 dB
NF
Gain Flat to DC
f = 0.1 – 2 GHz
f = 3 GHz
f = 4 GHz
Id = 12 to 20 mA
Id = 8 mA
Id = 12 mA
Id = 20 mA
TMS = +125°C
TMS = +25°C
TMS = –55°C
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