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參數(shù)資料
| 型號(hào)： | INA-03100 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CHIP |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | INA-03100 |
2
INA-03100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
50 mA
Power Dissipation[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
200
°C
Storage Temperature
–65 to 200
°C
Thermal Resistance[2]:
θ
jc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 14.3 mW/
°C for T
MS >
186
°C.
INA-03100 Typical Scattering Parameters[1] (Z
O
= 50
, T
A
= 25
°C, I
d
= 12 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.05
0.35
176
26.6
21.4
–4
–36.0
.016
8
.56
–1
1.25
0.10
0.35
172
26.6
21.3
–8
–36.5
.015
–4
.56
–3
1.30
0.20
0.33
165
26.4
21.0
–15
–36.4
.015
–5
.56
–4
1.30
0.40
0.31
150
26.1
20.1
–29
–36.0
.016
–13
.54
–7
1.33
0.60
0.27
137
25.6
19.0
–42
–37.6
.013
–14
.54
–8
1.58
0.80
0.23
125
25.0
17.8
–53
–36.1
.016
–13
.53
–9
1.49
1.00
0.19
113
24.5
16.7
–63
–35.1
.018
–16
.53
–10
1.43
1.20
0.16
99
24.0
15.9
–72
–36.9
.014
–21
.54
–12
1.72
1.40
0.13
76
23.8
15.4
–81
–36.4
.015
–12
.55
–15
1.65
1.60
0.12
51
23.6
15.2
–88
–35.6
.017
–11
.56
–17
1.54
1.80
0.13
21
23.6
15.5
–97
–34.1
.020
–5
.58
–20
1.24
2.00
0.18
–5
23.8
15.5
–106
–34.3
.019
–13
.60
–25
1.18
2.50
0.40
–52
24.7
17.2
–132
–30.2
.031
–9
.67
–38
0.53
3.00
0.81
–86
25.6
19.1
–167
–27.0
.045
–12
.70
–64
0.03
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Avantek Microwave Semiconductors databook.
S11
S21
S12
S22
GP
Power Gain (|S21| 2)
f = 1.5 GHz
dB
26.0
GP
Gain Flatness
f = 0.01 to 2.0 GHz
dB
±0.5
f3 dB
3 dB Bandwidth
GHz
2.8
ISO
Reverse Isolation (|S12| 2)
f = 0.01 to 2.0 GHz
dB
37
Input VSWR
f = 0.01 to 2.0 GHz
2.05
Output VSWR
f = 0.01 to 2.0 GHz
3.05
NF
50
Noise Figure
f = 1.5 GHz
dB
2.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.5 GHz
dBm
1.0
IP3
Third Order Intercept Point
f = 1.5 GHz
dBm
10
tD
Group Delay
f = 1.5 GHz
psec
200
Vd
Device Voltage
f = 1.5 GHz
V
3.5
4.5
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/
°C+5
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.
INA-03100 Electrical Specifications[1,3], T
A = 25°C
Symbol
Parameters and Test Conditions[2]: I
d = 12 mA, ZO = 50
Units
Min.
Typ.
Max.
VSWR
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