參數(shù)資料
型號(hào): INA-02100
英文描述: GT 10C 10#16 PIN PLUG
中文描述: 低噪聲,可級聯(lián)硅雙極MMIC放大器
文件頁數(shù): 3/3頁
文件大小: 56K
代理商: INA-02100
6-92
INA-02100 Typical Performance, T
A
= 25
°
C
(Unless otherwise noted: The values are the achievable performance for the INA-02100 mounted in a 70 mil
stripline package.)
0
10
20
30
40
50
I
d
G
p
I
d
(mA)
0
4
6
2
8
V
d
(V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
N
15
20
25
30
35
1.5
.01 .02
.05
0.1 0.2
0.5
1.0
2.0
2.0
2.5
3.0
3.5
G
p
N
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
A
= 25
°
C, I
d
= 35 mA.
T
MS
= +125
°
C
T
MS
= +25
°
C
T
MS
= –55
°
C
15
20
25
30
35
20
30
40
50
Figure 3. Power Gain vs. Current.
0.1 GHz
0.5 GHz
1.5 GHz
1.0 GHz
1.0
2.5
2.0
3.0
1.0
29
30
31
32
8
10
12
14
–55
–25
+25
+85
+125
.02
.05
0.1
0.5
0.2
2.0
1.0
.02
.05
0.1
0.5
0.2
2.0
1.0
N
0
9
6
15
12
3
1.5
3.0
2.5
3.5
2.0
P
1
P
1
G
p
TEMPERATURE (
°
C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, I
d
= 35 mA.
G
p
P
1 dB
NF
I
d
= 40 mA
I
d
= 35 mA
I
d
= 30 mA
I
d
= 30 to 40 mA
Gain Flat to DC
375
±
13
μ
m
14.8
±
0.5 mil
(4)
(3)
(1)
(2)
RF
IN
RF
GND
2
GND
1
500
±
13
μ
m
19.7
±
0.5 mil
Chip thickness is 140
μ
m/5.5 mil. Bond Pads are
41
μ
m/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
INA-02100 Chip Dimensions
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