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參數(shù)資料
| 型號： | INA-02100 |
| 英文描述： | GT 10C 10#16 PIN PLUG |
| 中文描述： | 低噪聲，可級聯(lián)硅雙極MMIC放大器 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | INA-02100 |
6-91
INA-02100 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
400 mW
+13 dBm
200
°
C
–65 to 200
°
C
Thermal Resistance
[2]
:
θ
jc
= 60
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C
3. Derate at 16.7 mW/
°
C for T
MS
>
176
°
C.
INA-02100 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 5 mA)
S
11
S
21
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
0.06
0.05
0.03
0.02
0.01
0.02
0.03
0.06
0.10
0.17
0.24
0.30
0.37
0.42
0.46
0.50
0.51
–4
–8
32.5
32.5
32.3
31.8
31.1
30.4
29.7
29.0
27.9
26.9
26.0
25.1
24.1
22.9
21.5
18.3
14.6
42.1
42.0
41.3
39.0
36.2
33.3
30.7
28.4
24.8
22.0
19.9
18.0
16.0
14.0
12.0
8.2
5.4
–2
–8
–39.3
–39.4
–37.9
–39.2
–38.8
–40.4
–39.3
–39.5
–38.1
–36.4
–35.5
–34.1
–32.6
–33.1
–31.4
–29.3
–28.5
.011
.011
.013
.011
.011
.010
.011
.011
.012
.015
.017
.020
.023
.022
.027
.034
.038
14
12
.20
.20
.20
.21
.22
.24
.26
.28
.32
.34
.36
.38
.32
.26
.22
.19
.15
–1
1.27
1.28
1.17
1.33
1.36
1.63
1.56
1.67
1.58
1.41
1.32
1.17
1.19
1.29
1.25
1.34
1.83
1
–46
–52
–46
–44
–35
–29
–41
–60
–73
–89
–103
–116
–128
–146
–162
–16
–30
–43
–55
–65
–74
–92
–108
–124
–141
–157
–174
171
142
116
6
–1
–4
3
4
2
–12
–2
–17
–5
–9
–19
–16
–16
–30
–28
–31
–44
–47
–1
–4
–14
–26
–40
–60
–91
–111
–122
–148
178
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the
Communications Components Designer’s
Catalog.
S
12
S
22
G
P
G
P
f
3 dB
ISO
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Reverse Isolation (|S
12
|
2
)
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.5 GHz
f = 0.1 to 1.0 GHz
dB
dB
GHz
dB
31.5
±
1.5
1.0
39
1.4:1
1.5:1
2.0
11
23
350
5.5
+10
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
dB
dBm
dBm
psec
V
mV/
°
C
4.0
7.0
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-02100 mounted in a 70 mil stripline package.
INA-02100 Electrical Specifications
[1,3]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
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