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參數(shù)資料
| 型號(hào)： | INA-01100 |
| 英文描述： | GT 5C 5#16S PIN PLUG |
| 中文描述： | 低噪聲，可級(jí)聯(lián)硅雙極MMIC放大器 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 56K |
| 代理商： | INA-01100 |
6-85
INA-01100 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
400 mW
+13 dBm
200
°
C
–65 to 200
°
C
Thermal Resistance:
θ
jc
= 60
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C.
3. Derate at 16.7 mW/
°
C for T
MS
>
176
°
C.
INA-01100 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, V
CC
= 35 mA)
S
11
S
21
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.5
2.0
2.5
3.0
0.09
0.10
0.11
0.14
0.18
0.20
0.22
0.24
0.27
0.30
0.44
0.44
0.46
0.48
–16
–27
–5
–80
–98
–110
–115
–120
–124
–127
165
154
148
139
32.7
32.7
32.4
31.6
30.5
29.4
28.4
27.4
25.7
24.3
21.8
17.9
14.6
11.4
43.4
43.1
41.9
38.0
33.7
29.6
26.2
23.4
19.3
16.3
12.37 –179
7.88
5.36
3.71
–1
–38.5
–38.6
–38.4
–38.6
–38.8
–39.6
–38.6
–39.1
–38.3
–36.1
–33.6
–33.0
–30.6
–30.0
.012
.012
.012
.012
.011
.011
.012
.011
.012
.016
.020
.022
.029
.032
–1
15
–8
.18
.19
.20
.24
.27
.30
.32
.34
.36
.36
.19
.13
.12
.10
1
5
1.17
1.18
1.17
1.22
1.31
1.51
1.48
1.67
1.76
1.58
1.75
2.42
2.63
3.31
–10
–20
–37
–52
–65
–75
–84
–100
–115
10
14
15
10
4
–10
2
–12
–7
–6
–5
42
42
36
45
6
1
–11
–22
–69
–106
–151
159
146
121
96
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the
Communications Components Designer’s
Catalog.
S
12
S
22
G
P
G
P
f
3 dB
ISO
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Reverse Isolation (|S
12
|
2
)
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 100 MHz
f = 10 to 250 MHz
dB
dB
MHz
dB
32.5
±
0.5
500
39
1.6:1
1.5:1
1.7
11
23
200
5.5
+10
f = 10 to 250 MHz
f = 10 to 250 MHz
f = 10 to 250 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
dB
dBm
dBm
psec
V
mV/
°
C
4.0
7.0
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.
INA-01100 Electrical Specifications
[1,3]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
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