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參數(shù)資料
| 型號： | IMX9T110 |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 500MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|叩| 20V的五（巴西）總裁| 500mA的一（c）|律師- 74 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 39K |
| 代理商： | IMX9T110 |
IMX9
Transistors
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
1
2
2000
1000
200
500
100
20
50
10
5
2
5
10
20
50 100 200
5001000
I
C
/
I
B
=
25
Measured using
pulse current.
Ta
=
100
°
C
25
°
C
25
°
C
B
B
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current (
Ι
)
1
2
5
10
20
50 100200
5001000
10000
5000
2000
1000
500
200
100
50
20
10
Ta
=
25
°
C
Pulsed
I
C
/I
B
=
10
25
50
100
1
2
5 10
20
50 100 200
5001000
10000
5000
2000
1000
500
200
100
50
20
10
B
B
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current (
ΙΙ
)
Measured using
pulse current.
l
C
/l
B
=
10
25
°
C
100
°
C
Ta
=
25
°
C
EMITTER CURRENT : I
E
(mA)
T
T
Fig.10 Gain bandwidth product vs.
emitter current
1
2
5
10
20
50
100
200
500
1000
10000
5000
2000
500
200
1000
100
20
50
10
Ta
=
25
°
C
V
CE
10V
Measured using
pulse current.
0.1 0.2
0.5 1
2
5
10 20
50 100
C
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
200
500
1000
10
20
50
2
5
1
Ta
=
25
°
C
f
=
1MHz
I
E
=
0A
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
O
)
BASE CURRENT : I
B
(mA)
Fig.12 Output-on resistance vs.
base current
0.1
0.2
0.5
1
2
5
10
20
50
100
Ta=25
°
C
f=1kHz
Vi=100mV(
rms)
R
L
=1k
z
Ron measurement circuit
Ron
=
×
R
L
Vi-V
0
V
0
R
L
=
1k
I
B
Output
V
0
Input
Vi
1kHz
100mV(rms)
V
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