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參數(shù)資料
| 型號： | IMX9T110 |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 500MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|叩| 20V的五（巴西）總裁| 500mA的一（c）|律師- 74 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 39K |
| 代理商： | IMX9T110 |
IMX9
Transistors
z
Packaging specifications
IMX9
Part No.
T110
3000
Packaging type
Code
Basic ordering unit (pieces)
Taping
z
Electrical characteristic curves
2.0
Ta=25
°
C
C
C
0
0.4
0.8
1.2
1.6
0
0.1
0.2
0.3
0.4
0.5
0.2
μ
A
0.4
μ
A
0.6
μ
A
0.8
μ
A
1.0
μ
A
1.2
μ
A
1.4
μ
A
1.6
μ
A
I
B
=0
1.8
μ
A
2.0
μ
A
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics(
Ι
)
0
200
400
600
800
1000
0
2
4
6
8
10
Ta
=
25
°
C
Measured using
pulse current.
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA 2.0mA
I
B
=
0mA
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
ΙΙ
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
5
10
20
50
100
200
500
1000
C
C
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3 Grounded emitter propagation
characteristics
V
CE
=
3V
Measured using
pulse current.
25
°
C
25
°
C
Ta=100
°
C
1
2
5
10
20
50 100 200 5001000
10
20
50
100
200
500
1000
2000
5000
10000
Ta
=
25
°
C
Measured using
pulse current.
V
CE
=
5V
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
Ι
)
3V
1V
1
2
5
10
20
50 100 200
5001000
10000
5000
2000
1000
500
200
100
50
20
10
V
CE
=
3V
Measured using
pulse current.
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
25
°
C
25
°
C
Ta
=
100
°
C
1
2
2000
1000
200
500
100
20
50
10
5
2
5
10
20
50 100 200
5001000
Ta
=
25
°
C
Measured using
pulse current.
10
25
50
I
C
/I
B
=
100
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι
)
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