參數(shù)資料
型號(hào)： IKP20N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 10/15頁(yè)
文件大?。?/td> 435K
代理商： IKP20N60T
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
10
Rev. 2.2 Dec-04
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
1μs
10μs
100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
1.8μC
t
r
,
R
600A/μs
900A/μs
1200A/μs
0ns
50ns
100ns
150ns
200ns
250ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
600A/μs
900A/μs
1200A/μs
0.2μC
0.4μC
0.6μC
0.8μC
1.0μC
1.2μC
1.4μC
1.6μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=20A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 20A,
Dynamic test circuit in Figure E)
R
,(K/W )
0.18715
0.31990
0.30709
0.07041
R
1
τ
,
(s)
6.925*10
-2
1.085*10
-2
6.791*10
-4
9.59*10
-5
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.13483
0.58146
0.44456
0.33997
R
1
τ
,
(s)
9.207*10
-2
1.821*10
-2
1.47*10
-3
1.254*10
-4
6
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
相關(guān)PDF資料
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IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP20N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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IKP20N60TAHKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 166W TO220-3-1
IKP20N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 166W TO220-3
IKP40N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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