參數(shù)資料
型號： IKP06N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 9/13頁
文件大?。?/td> 358K
代理商： IKP06N60T
IKP06N60T
TrenchStop series
p
Power Semiconductors
9
Rev. 2.2 May 06
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
t
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0ns
50ns
100ns
150ns
200ns
250ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0,0μC
0,1μC
0,2μC
0,3μC
0,4μC
0,5μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 400V,
I
F
= 6A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
=400V,
I
F
=6 A,
Dynamic test circuit in Figure E)
R
,(K/W )
0.3837
0.4533
0.5877
0.2483
R
1
τ
,
(s)
5.047*10
-2
4.758*10
-3
4.965*10
-4
4.717*10
-5
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.2520
0.4578
1.054
0.7822
R
1
τ
,
(s)
4.849*10
-2
1.014*10
-2
1.309*10
-3
1.343*10
-4
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
相關(guān)PDF資料
PDF描述
IKP15N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP06N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
IKP08N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP08N65F5XKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP08N65H5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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