參數(shù)資料
型號(hào)： IKP06N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 358K
代理商： IKP06N60T
IKP06N60T
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
TrenchStop series
p
Power Semiconductors
3
Rev. 2.2 May 06
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9
6
-
-
-
-
-
-
-
130
58
0.09
0.11
0.2
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
=23
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=60nH,
2)
=40pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
123
190
5.3
450
-
-
-
-
ns
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=400V,
I
F
=6A,
di
F
/dt
=550A/
μ
s
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9
8
-
-
-
-
-
-
-
165
84
0.14
0.18
0.335
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
= 23
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
180
500
7.6
285
-
-
-
-
ns
nC
A
A/
μ
s
T
j
=175
°
C
V
R
=400V,
I
F
=6A,
di
F
/dt
=550A/
μ
s
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP06N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
IKP08N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP08N65F5XKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP08N65H5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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