參數(shù)資料
型號: IHW20T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Soft Switching Series
中文描述: 軟開關(guān)系列
文件頁數(shù): 8/14頁
文件大?。?/td> 320K
代理商: IHW20T120
Soft Switching Series
IHW20T120
Power Semiconductors
8
Rev. 2 Apr-04
E
,
S
5A
10A
15A
20A
25A
30A
35A
40
0,0mJ
2,0mJ
4,0mJ
6,0mJ
8,0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
E
,
S
5
30
55
80
0 mJ
1 mJ
2 mJ
3 mJ
4 mJ
5 mJ
6 mJ
7 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=35
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=20A,
Dynamic test circuit in Figure E)
E
,
S
50°C
100°C
150°C
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=20A,
R
G
=35
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
=150°C,
V
GE
=0/15V,
I
C
=20A,
R
G
=35
,
Dynamic test circuit in Figure E)
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