參數(shù)資料
型號： IHP10T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 2/14頁
文件大?。?/td> 334K
代理商： IHP10T120
IHP10T120
Soft Switching Series
Power Semiconductors
2
Rev. 2 Jun-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
IGBT thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.9
R
thJCD
2.6
R
thJA
62
K/W
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.5mA
V
GE
= 15V,
I
C
=10A
T
j
=25
°
C
T
j
=125
°
C
T
j
=150
°
C
V
GE
=0V,
I
F
=4A
T
j
=25
°
C
T
j
=150
°
C
I
C
=0.6mA,
V
CE
=
V
GE
V
CE
=1200V
,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
1200
-
-
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage
V
F
-
-
1.65
1.7
2.15
-
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
5.0
-
-
-
-
5.8
-
-
-
10
none
6.5
0.2
2.0
100
-
V
mA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=10A
nA
S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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