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參數(shù)資料
| 型號： | IHP10T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 334K |
| 代理商： | IHP10T120 |
IHP10T120
Soft Switching Series
Power Semiconductors
1
Rev. 2 Jun-04
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10
μ
s
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
CE(sat)
- Very low
V
ce(sat)
Very soft, fast recovery anti-parallel EmCon
HE diode
Low EMI
Application specific optimisation of inverse diode
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
G
C
E
T
j,max
Marking
Package
Ordering Code
IHP10T120
1200V
10A
1.7V
150
°
C
H10T120
TO-220-3-1
Q67040-S4650
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
, T
c
= 25°C
Diode surge non repetitive current, t
p
limited by T
jmax
T
C
= 25
°
C, t
p
= 10ms, sine halfwave
T
C
= 25
°
C, t
p
≤
2.5μs, sine halfwave
T
C
= 100
°
C, t
p
≤
2.5μs, sine halfwave
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
16
10
V
A
I
Cpuls
-
24
24
I
F
11
7
I
Fpuls
I
FSM
16.5
28
50
40
A
V
GE
t
SC
±
20
10
V
μ
s
P
tot
T
j
T
stg
-
138
W
-40...+150
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-220-3-1
(TO-220AB)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IHP10T120_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
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