參數(shù)資料
型號(hào): IGW15T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss IGBT in Trench and Fieldstop Technology
中文描述: 在海溝和低場(chǎng)終止IGBT的技術(shù)損失
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 408K
代理商: IGW15T120
IGW15T120
^
TrenchStop Series
Power Semiconductors
6
Preliminary / Rev. 1 Jul-02
t
S
0A
10A
20A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
S
10
35
R
G
,
GATE RESISTOR
60
85
110
1ns
10ns
100ns
1μs
t
f
t
r
t
d(off)
t
d(on)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=56
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=15A,
Dynamic test circuit in Figure E)
t
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
f
t
d(on)
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=15A,
R
G
=56
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.6mA)
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