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參數(shù)資料
| 型號： | IGB50N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰(zhàn)壕和場終止技術 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 402K |
| 代理商： | IGB50N60T |
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
3
Rev. 2.2 Dec-04
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
26
29
299
29
1.2
1.4
2.6
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 7
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
1)
=103nH,
1)
=39pF
mJ
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
27
33
341
55
1.8
1.8
3.6
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 7
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
1)
=103nH,
1)
=39pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
2)
Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E.
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