參數(shù)資料
型號: IGA03N120H2
廠商: INFINEON TECHNOLOGIES AG
英文描述: HighSpeed 2-Technology
中文描述: 高速2 -技術(shù)
文件頁數(shù): 3/10頁
文件大?。?/td> 201K
代理商: IGA03N120H2
IGA03N120H2
Power Semiconductors
3
Mar-04, Rev. 2.0
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
ns
T
j
=25
°
C
V
CC
=800V,
I
C
=3A
V
GE
=0V/15V
R
G
=82
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH
1)
=40pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=3A
V
GE
=0V/15V
R
G
=82
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH
1)
=40pF
mJ
Switching Energy ZVT, Inductive Load
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=3A
V
GE
=0V/15V
R
G
=82
, C
r
T
j
=25
°
C
T
j
=150
°
C
1)
=4nF
-
-
0.05
0.09
-
-
mJ
1 )
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
2 )
Commutation diode from device IKP03N120H2
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