參數(shù)資料
型號： IFN425
廠商： InterFET Corporation
英文描述： Dual N-Channel Silicon Junction Field-Effect Transistor
中文描述： 雙N溝道硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 67K
代理商： IFN425
B-42
01/99
IFN424, IFN425, IFN426
Dual N-Channel Silicon Junction Field-Effect Transistor
￥ Very High Impedance
Differential Amplifiers
￥ Electrometers
Absolute maximum ratings at T
A
= 25C
Device Dissapation (Derate 3.2 mW/°C to 50°C)
Total Device Dissipation (Derate 6 mW/°C to 150 °C)
Storage Temperature Range
400 mW
750 mW
– 60 °C to 200 °C
TOD78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
At 25°C free air temperature:
IFN424, IFN425, IFN426
Process NJ01
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate to Gate Breakdown Voltage
V
(BR)GSS
BV
G1G2
– 40
±40
– 60
V
V
pA
nA
pA
pA
V
V
μA
I
G
= – 1 μA, V
DS
= V
I
G
= – 1 μA, I
D
= A, I
S
= A
V
GS
= – 20V, V
DS
= V
V
GS
= – 20V, V
DS
= V
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, V
GS
= V
Gate Reverse Current
I
GSS
– 3
– 3
– 0.5
– 500
– 3
– 2.9
T
A
= +125°C
Gate Operating Current
I
G
T
A
= +125°C
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
V
GS
I
DSS
– 0.4
60
1800
Dynamic Electrical Characteristics
Common Source Forward Transconductance
g
fs
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
rss
Equivalent Short Circuit Input Noise Voltage
100
1500
3
3
1.5
70
μS
μS
pF
pF
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, I
D
= 30 μA
R
G
= 1 M
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
g
os
C
iss
ˉ
N
20
nV/
√
Hz
Noise Figure
NF
1
dB
f = 10 Hz
Max - IFN424 IFN425 IFN426
Differential Gate Source Voltage
|V
GS1
–V
GS2
|
10
15
25
mV
V
DG
= 10V, I
D
= 30 μA
Differential Gate Source Voltage
With Temperature
|V
GS1
–V
GS2
|
T
T
A
= – 55°C
T
B
= 25°C
T
C
= 125°C
10
25
40
μV/°C
V
DG
= 10V, I
D
= 30 μA
Min - IFN424 IFN425 IFN426
Common Mode Rejection Ratio
CMRR
90
80
80
dB
V
DG
= 10V to 20V, I
D
= 30 μA
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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