參數(shù)資料
型號(hào)： IFN6449
廠商： InterFET Corporation
英文描述： N-Channel Silicon Junction Field-Effect Transistor
中文描述： N溝道硅結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 90K
代理商： IFN6449
B-48
01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
￥ High Voltage
Absolute maximum ratings at T
A
= 25C
IFN6449
– 100 V
– 300 V
10 mA
800 mW
6.4 mW/°C 6.4 mW/°C
IFN6450
– 100 V
– 200 V
10 mA
800 mW
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
TOD39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature:
IFN6449
IFN6450
Process NJ42
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Drain Breakdown Voltage
Gate Source Breakdown Voltage
V
(BR)GDO
V
(BR)GSO
– 300
– 100
– 200
– 100
V
V
nA
μA
V
mA
I
G
= – 10 μA, I
S
= A
I
G
= – 10 μA, I
D
= A
V
GS
= – 80V, V
DS
= V
V
GS
= – 80V, V
DS
= V
V
DS
= 30V, I
D
= 4 nA
V
DS
= 30V, V
GS
= V
Gate Reverse Current
I
GSS
– 100
– 100
– 15
10
T
A
= 150°C
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 2
2
– 15
10
– 2
2
Dynamic Electrical Characteristics
Common Source Forward
Transfer Transmittance
|Y
fs
|
0.5
3
0.5
3
mS
V
DS
= 30V, V
GS
= V
f = 1 kHz
Common Source Output Conductance
Common Source Input Capacitance
g
os
C
iss
100
10
100
10
μS
pF
V
DS
= 30V, V
GS
= V
V
DS
= 30V, V
GS
= V
f = 1 kHz
f = 1 MHz
Common Source
Reverse Transfer Capacitance
C
rss
5
5
pF
V
DS
= 30V, V
GS
= V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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