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參數(shù)資料
| 型號： | IFM008A |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3/5 Volt Series 100 Flash Memory Miniature Card(3/5V 100系列閃速存儲器微型卡) |
| 中文描述： | 8M X 8 FLASH 3V PROM CARD, 100 ns, XMA60 |
| 文件頁數(shù)： | 21/31頁 |
| 文件大?。?/td> | 258K |
| 代理商： | IFM008A |
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E
iFM002/004/008A
21
PRELIMINARY
Address
Values
Description
15BH
52H
R
15CH
41H
A
15DH
54H
T
15EH
49H
I
15FH
4FH
O
160H
4EH
N
161H
20H
SPACE
162H
31H
1
163H
39H
9
164H
39H
9
165H
36H
6
166H
00H
END TEXT
167H
FFH
END OF LIST
168H
1CH
CISTPL_DEVICE_OC
169H
03H
TPL_LINK
16AH
02H
3.3V Operation
16BH
53H
150 ns Access Time
16CH
06H
CARD SIZE: 2 MB
0EH
CARD SIZE: 4 MB
1EH
CARD SIZE 8 MB
16DH
18H
CISTPL_JEDEC_C
16EH
02H
TPL_LINK
16FH
89H
MANUFACTURER ID
170H
A6H
2 MB Device
Component JEDEC ID
AAH
4 MB Device
Component JEDEC ID
AAH
8 MB Device
Component JEDEC ID
171EH
FFH
CISTPL_END
172FH
00H
INVALID ADDRESS
8.0
SYSTEM DESIGN
CONSIDERATIONS
8.1
Power Supply Decoupling
Flash memory power-switching characteristics
require
careful
device
designers are interested in three supply current
issues: standby, active and transient current peaks
which are produced by rising and falling edges of
CEL# and CEH#. The capacitive and inductive
loads on the card and internal flash memory device
pairs determine the magnitudes of these peaks.
decoupling.
System
The host system should also have a 4.7 μF
electrolytic capacitor between V
and GND as
close to the connector as possible. The bulk
capacitance overcome voltage slumps caused by
printed-circuit-board trace inductance, and supply
charge to the smaller capacitors as needed.
8.2
Power-Up/Down Protection
The Miniature Card specified socket properly
sequences the power supplies to the flash memory
card via power/insertion signals that connect before
the interface signals.
Each device in the memory card is designed to
offer protection against accidental erasure or
writing, caused by spurious system-level signals
that may exist during power transitions. The card
will power-up into the read state.
A system designer must guard against active writes
for V
CC
voltages above V
LKO
(2.0 V). Since WE#
and CEH#/CEL# must be active for a command
write, driving either to V
IH
will inhibit writes.
The
card provides 100 K
pull-up resistors on CEH#
and CEL# to provide some protection against
spurious writes.
The two-step command sequence for a write
provides additional protection against accidental
writes to the card.
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