參數(shù)資料
型號： IF3602
廠商： InterFET Corporation
英文描述： Dual N-Channel Silicon Junction Field-Effect Transistor
中文描述： 雙N溝道硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 92K
代理商： IF3602
01/99
B-35
IF3602
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings = T
A
at 25C
Reverse Gate Source Voltage & Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
300 mW
4 mW/°C
– 65°C to 200°C
TOD78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature:
IF3602
Process NJ3600L
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 20
V
nA
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= V
– 0.5
– 3
– 0.35
30
Dynamic Electrical Characteristics
Typ
Common Source
Forward Transconductance
g
fs
750
mS
V
DS
= 10V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
300
pF
V
DS
= V, V
GS
= – 4V
f = 1 MHz
Common Source
Reverse Transfer Capacitance
C
rss
200
pF
V
DS
= V, V
GS
= – 4V
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
0.3
nV/
√
Hz
V
DG
= 3V, I
D
= 5 mA
f = 100 Hz
Max
Differential Gate Source Voltage
|V
GS1
– V
GS2
|
100
mV
V
DS
= 10V, V
GS
= V
￥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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