參數(shù)資料
型號： IFN146
廠商： InterFET Corporation
英文描述： Dual N-Channel Silicon Junction Field-Effect Transistor
中文描述： 雙N溝道硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大小： 89K
代理商： IFN146
01/99
D-5
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 40 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
TOD71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
At 25°C free air temperature:
IFN146
Process NJ450
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 40
V
nA
μA
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
DS
= 10V, I
D
= 1 μA
V
DS
= 10V, V
GS
= V
Gate Reverse Current
I
GSS
– 1
– 1
– 1.2
30
T
A
= 150°C
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 0.3
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
30
40
mS
V
DS
= 10V, V
GS
= V
I
DSS
= 5 mA
V
DS
= 10V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
75
pF
f = 1 kHz
Common Source Reverse
Transfer Capacitance
C
rss
15
pF
V
DS
= 10V, I
D
= A
f = 1 kHz
Noise Figure
NF
1
dB
V
DS
= 10V, I
D
= 5 mA
R
G
= 100
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Differential Gate Source Voltage
|V
GS1
– V
GS2
|
20
mV
￥ Low-Noise Audio Amplifier
￥ Equivalent to Japanese 2SK146
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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