參數(shù)資料
型號(hào)： IF1330
廠商： InterFET Corporation
英文描述： N-Channel Silicon Junction Field-Effect Transistor
中文描述： N溝道硅結(jié)場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 59K
代理商： IF1330
01/99
B-31
IF1330
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
225 mW
1.8 mW/°C
– 65°C to 200°C
TOD236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature:
IF1330
Process NJ132H
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 20
V
nA
V
mA
I
G
= – 1 μA, V
DS
= V
V
DS
= V, V
GS
= – 10V
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= V
– 0.1
– 1.5
20
– 0.35
5
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
10
mS
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Common Source Input Capacitance
C
iss
20
pF
V
DS
= 10V, I
D
= 5 mA
f = 1 MHz
Common Source
Reverse Transfer Capacitance
C
rss
5
pF
V
DS
= 10V, I
D
= 5 mA
f = 1 MHz
Typ
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
2.5
nV/
√
Hz
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
￥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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